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2N7002WT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N7002WT1GONSEMI228000Yes

2N7002WT1G** is a **N-channel MOSFET** manufactured by **ON Semiconductor**.

The 2N7002WT1G is a N-channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 115mA
  • Pulsed Drain Current (IDM): 800mA
  • Power Dissipation (PD): 200mW
  • On-Resistance (RDS(on)): 5Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V to 2.5V
  • Input Capacitance (Ciss): 25pF (typical)
  • Output Capacitance (Coss): 8pF (typical)
  • Reverse Transfer Capacitance (Crss): 5pF (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-323 (SC-70)

Description:

The 2N7002WT1G is a small-signal MOSFET designed for low-voltage, low-current switching applications. It is optimized for high-speed switching and low power consumption, making it suitable for portable electronics, signal switching, and load control in battery-powered devices.

Features:

  • Low threshold voltage for compatibility with logic-level signals
  • Fast switching speed
  • Low input and output capacitance
  • ESD protection (up to 2kV HBM)
  • Pb-free and RoHS compliant
  • Compact SOT-323 package for space-constrained applications

This MOSFET is commonly used in battery management, level shifting, signal routing, and power gating circuits.

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