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BSS138LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSS138LT1GONSEMI95212Yes

BSS138LT1G** is a **N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET)** manufactured by **ON Semiconductor**.

The BSS138LT1G is a N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) manufactured by ON Semiconductor.

Specifications:

  • Drain-Source Voltage (VDS): 50V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 220mA
  • Power Dissipation (PD): 225mW
  • Threshold Voltage (VGS(th)): 1.3V (max)
  • On-Resistance (RDS(on)): 3.5Ω (max) at VGS = 4.5V
  • Input Capacitance (Ciss): 35pF
  • Output Capacitance (Coss): 10pF
  • Reverse Transfer Capacitance (Crss): 5pF
  • Turn-On Delay Time (td(on)): 6ns
  • Rise Time (tr): 4ns
  • Turn-Off Delay Time (td(off)): 20ns
  • Fall Time (tf): 6ns
  • Package: SOT-23 (3-Lead)

Descriptions:

The BSS138LT1G is a low-threshold, logic-level MOSFET designed for low-voltage, high-speed switching applications. It is optimized for battery-powered circuits, portable electronics, and signal switching due to its low gate drive requirements and fast switching characteristics.

Features:

  • Logic-Level Gate Drive (4.5V operation)
  • Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • Low Input and Output Capacitance
  • ESD Protection (Human Body Model > 2kV)
  • Pb-Free and RoHS Compliant

This MOSFET is commonly used in load switching, level shifting, and power management applications.

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