The HY57V283220T-7 is a synchronous dynamic random-access memory (SDRAM) module manufactured by HY (Hynix Semiconductor). Below are the factual specifications, descriptions, and features of this component:
Specifications:
- Manufacturer: Hynix (HY)
- Part Number: HY57V283220T-7
- Type: Synchronous DRAM (SDRAM)
- Density: 256Mbit (32M x 8)
- Organization: 4 Banks x 8,388,608 words x 8 bits
- Voltage: 3.3V ± 0.3V
- Speed: 7ns (143MHz)
- Package: 54-pin TSOP-II (400mil)
- Interface: LVTTL
- Refresh Mode: Auto-refresh & Self-refresh
- Burst Length: 1, 2, 4, 8, or Full Page
- CAS Latency (CL): 2, 3
- Operating Temperature: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) depending on variant
Descriptions:
- The HY57V283220T-7 is a high-speed CMOS SDRAM designed for applications requiring high-density, low-power memory.
- It supports programmable burst lengths and sequential/interleaved burst modes.
- Features a fully synchronous operation with a single 3.3V power supply.
- Includes an auto-precharge function for efficient memory management.
Features:
- 4-Bank Architecture: Allows concurrent operations for improved performance.
- Auto Refresh & Self-Refresh: Supports power-saving modes.
- Programmable CAS Latency (2 or 3): Adjustable for system optimization.
- Burst Read & Write Operations: Enhances data transfer efficiency.
- Single 3.3V Power Supply: Reduces power consumption.
- Compliant with JEDEC Standards: Ensures industry compatibility.
This memory chip is commonly used in networking equipment, embedded systems, and other applications requiring reliable, high-speed memory.