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LMBT3904LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LMBT3904LT1GLRC106620Yes

LMBT3904LT1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The LMBT3904LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Key Specifications:

  • Type: NPN BJT
  • Collector-Emitter Voltage (VCE): 40 V
  • Collector-Base Voltage (VCB): 60 V
  • Emitter-Base Voltage (VEB): 6 V
  • Continuous Collector Current (IC): 200 mA
  • Total Power Dissipation (PD): 225 mW
  • DC Current Gain (hFE): 100 – 300 (at IC = 10 mA, VCE = 1 V)
  • Transition Frequency (fT): 300 MHz
  • Operating Temperature Range: -55°C to +150°C

Package:

  • SOT-23 (TO-236AB) surface-mount package

Features:

  • Designed for general-purpose amplification and switching applications
  • High current gain
  • Low noise performance
  • Suitable for high-speed switching

This transistor is commonly used in signal amplification, switching circuits, and other low-power applications.

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