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MMBT3906TT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBT3906TT1GONSEMI231000Yes

MMBT3906TT1G** is a PNP bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The MMBT3906TT1G is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: PNP
  • Collector-Emitter Voltage (VCE): -40V
  • Collector-Base Voltage (VCB): -40V
  • Emitter-Base Voltage (VEB): -5V
  • Continuous Collector Current (IC): -200mA
  • Total Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 100-300 @ 10mA
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (SC-59)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-power, high-speed switching.
  • RoHS compliant and lead-free.

Features:

  • High current gain bandwidth product.
  • Low saturation voltage.
  • Small surface-mount package for space-constrained applications.

For detailed electrical characteristics, refer to the official datasheet from ON Semiconductor.

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