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D1760Q Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
D1760Q101Yes

D1760Q** is a high-voltage, high-speed switching NPN bipolar junction transistor (BJT) designed for power applications.

The D1760Q is a high-voltage, high-speed switching NPN bipolar junction transistor (BJT) designed for power applications. Below are its key specifications, descriptions, and features:

Manufacturer:

  • STMicroelectronics

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 400V
  • Collector-Base Voltage (VCBO): 500V
  • Emitter-Base Voltage (VEBO): 9V
  • Collector Current (IC): 6A
  • Peak Collector Current (ICM): 12A
  • Power Dissipation (Ptot): 50W
  • DC Current Gain (hFE): 15 to 60
  • Transition Frequency (fT): 4MHz
  • Operating Temperature Range: -65°C to +150°C

Package:

  • TO-220AB (Through-hole package with three leads)

Features:

  • High-voltage capability
  • Fast switching speed
  • Low saturation voltage
  • High current gain linearity
  • Designed for power switching and amplifier applications

Applications:

  • Switching power supplies
  • Motor control circuits
  • High-voltage inverters
  • Electronic ballasts
  • General-purpose power amplification

This transistor is commonly used in industrial and consumer electronics where high-voltage and high-speed switching are required.

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