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MMBFJ177LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBFJ177LT1GONSEMI120000Yes

MMBFJ177LT1G** is a P-channel JFET (Junction Field-Effect Transistor) manufactured by **ON Semiconductor**.

The MMBFJ177LT1G is a P-channel JFET (Junction Field-Effect Transistor) manufactured by ON Semiconductor.

Specifications:

  • Type: P-Channel JFET
  • Drain-Source Voltage (VDS): -25V
  • Gate-Source Voltage (VGS): 25V
  • Drain Current (ID): -50mA
  • Power Dissipation (PD): 225mW
  • Gate-Source Cutoff Voltage (VGS(off)): -0.3V to -3V
  • Zero-Gate Voltage Drain Current (IDSS): -1mA to -20mA
  • Package: SOT-23 (3-Lead)

Descriptions:

The MMBFJ177LT1G is a small-signal P-channel JFET designed for low-power applications. It is optimized for high input impedance and low noise performance, making it suitable for analog switching and amplification circuits.

Features:

  • Low input capacitance
  • High input impedance
  • Low noise
  • Small SOT-23 package for space-constrained applications
  • Suitable for battery-powered devices

This transistor is commonly used in audio amplifiers, analog switches, and sensor interface circuits.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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