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ZXMN3B04N8 Specifications

Detailed technical information and Application Scenarios

Product Details

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ZXMN3B04N8101Yes

Manufacturer:** Texas Instruments **Part Number:** ZXMN3B04N8 ### **Specifications:** - **Transistor Type:** N-Channel MOSFET - **Drain-Source Voltage (VDS):** 30V - **Continuous Drain Current (ID):** 4.

Manufacturer: Texas Instruments

Part Number: ZXMN3B04N8

Specifications:

  • Transistor Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 4.3A
  • Pulsed Drain Current (IDM): 17A
  • Power Dissipation (PD): 1.4W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 50mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V (min), 2.5V (max)
  • Input Capacitance (Ciss): 300pF (typ)
  • Package: SOT-23-3

Description:

The ZXMN3B04N8 is a small-signal N-channel MOSFET designed for low-voltage switching applications. It offers low on-resistance and fast switching performance, making it suitable for power management, load switching, and DC-DC conversion.

Features:

  • Low threshold voltage for compatibility with logic-level signals
  • Low RDS(on) for efficient power handling
  • Compact SOT-23-3 package for space-constrained designs
  • Fast switching speed
  • ESD protection

This MOSFET is commonly used in battery-powered devices, portable electronics, and power management circuits.

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