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The 2N930 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by TelCom Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

• Transistor Type: NPN
• Maximum Collector-Base Voltage (V_CB): 60V
• Maximum Collector-Emitter Voltage (V_CE): 40V
• Maximum Emitter-Base Voltage (V_EB): 5V
• Collector Current (I_C): 50mA (continuous)
• Power Dissipation (P_D): 300mW
• DC Current Gain (h_FE): 100 – 300 (typical at I_C = 1mA, V_CE = 5V)
• Transition Frequency (f_T): 200MHz (typical)
• Operating Temperature Range: -65°C to +200°C

Descriptions:

• The 2N930 is a small-signal NPN transistor designed for low-power amplification and switching applications.
• It is housed in a TO-18 metal can package, providing good thermal performance.
• Suitable for RF, audio, and general-purpose amplification circuits.

Features:

• High current gain (h_FE) for efficient signal amplification.
• Low noise performance, making it ideal for audio applications.
• Fast switching speed, useful in RF and pulse circuits.
• Robust construction with a metal can package for durability.

This transistor is commonly used in amplifiers, oscillators, and switching circuits in consumer electronics and industrial applications.

*(Note: Always verify datasheets for exact parameters, as variations may exist.)*