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2N930 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N930TelCom106Yes

2N930** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **TelCom Semiconductor**.

The 2N930 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by TelCom Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (V_CB): 60V
  • Maximum Collector-Emitter Voltage (V_CE): 40V
  • Maximum Emitter-Base Voltage (V_EB): 5V
  • Collector Current (I_C): 50mA (continuous)
  • Power Dissipation (P_D): 300mW
  • DC Current Gain (h_FE): 100 – 300 (typical at I_C = 1mA, V_CE = 5V)
  • Transition Frequency (f_T): 200MHz (typical)
  • Operating Temperature Range: -65°C to +200°C

Descriptions:

  • The 2N930 is a small-signal NPN transistor designed for low-power amplification and switching applications.
  • It is housed in a TO-18 metal can package, providing good thermal performance.
  • Suitable for RF, audio, and general-purpose amplification circuits.

Features:

  • High current gain (h_FE) for efficient signal amplification.
  • Low noise performance, making it ideal for audio applications.
  • Fast switching speed, useful in RF and pulse circuits.
  • Robust construction with a metal can package for durability.

This transistor is commonly used in amplifiers, oscillators, and switching circuits in consumer electronics and industrial applications.

*(Note: Always verify datasheets for exact parameters, as variations may exist.)*

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