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MDE10N026RH Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MDE10N026RHMAGNACHIP 4800Yes

MDE10N026RH** is a power MOSFET manufactured by **MAGNACHIP**.

The MDE10N026RH is a power MOSFET manufactured by MAGNACHIP. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: MAGNACHIP
  • Part Number: MDE10N026RH
  • Transistor Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 10A
  • Pulsed Drain Current (IDM): 40A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 26mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 2.0V (min) to 4.0V (max)
  • Package: TO-252 (DPAK)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The MDE10N026RH is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance and high switching efficiency, making it suitable for DC-DC converters, motor control, and power supply circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • Fast switching performance
  • High current handling capability
  • Robust thermal performance
  • Suitable for surface-mount applications (DPAK package)

For detailed electrical characteristics and application notes, refer to the official MAGNACHIP datasheet.

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