Professional IC Distribution & Technical Solutions

Manufacturer: Micron Technology, Inc.

Part Number: MT29F4G08ABADAWP

Specifications:

• Memory Type: NAND Flash
• Density: 4Gb (512MB)
• Interface: Asynchronous
• Organization:
• Page Size: 4KB + 224B spare
• Block Size: 256KB (64 pages per block)
• Plane Size: 2 planes
• Device Width: 8-bit
• Voltage Supply:
• VCC: 2.7V - 3.6V
• Speed:
• tRC (Random Read Cycle Time): 25ns (max)
• tWC (Write Cycle Time): 30ns (max)
• Endurance:
• 100,000 program/erase cycles (typical)
• Data Retention:
• 10 years (at 40°C)
• Package:
• 48-pin TSOP (Thin Small Outline Package)

Descriptions:

The MT29F4G08ABADAWP is a 4Gb (512MB) NAND Flash memory device from Micron, designed for high-performance, low-power applications. It features an asynchronous interface and supports advanced error correction (ECC) for reliable data storage.

Features:

• Asynchronous NAND Flash with 8-bit I/O
• On-Die ECC (Error Correction Code) for improved data integrity
• Multi-Level Cell (MLC) Technology for higher density
• Page Program Time: 300µs (typical)
• Block Erase Time: 1.5ms (typical)
• Partial Page Programming: Supported
• Hardware Data Protection: Write-protect pin for security
• Operating Temperature Range:
• Commercial: 0°C to +70°C
• Industrial: -40°C to +85°C

This NAND Flash is commonly used in embedded systems, consumer electronics, and industrial applications requiring reliable non-volatile storage.