Professional IC Distribution & Technical Solutions

The S1NB60 is a Schottky Barrier Diode (SBD) manufactured by SHING. Below are the factual specifications, descriptions, and features of the component:

Specifications:

• Type: Schottky Barrier Diode (SBD)
• Maximum Average Forward Current (IF(AV)): 1A
• Peak Forward Surge Current (IFSM): 30A (non-repetitive)
• Maximum Reverse Voltage (VR): 60V
• Forward Voltage Drop (VF): 0.55V (typical at 1A)
• Reverse Leakage Current (IR): 0.5mA (maximum at VR = 60V)
• Operating Junction Temperature (TJ): -55°C to +125°C
• Storage Temperature Range (TSTG): -55°C to +150°C

Descriptions:

• The S1NB60 is a high-efficiency Schottky diode designed for low-power switching applications.
• It features a low forward voltage drop and fast switching characteristics, making it suitable for rectification and power management circuits.
• The diode is housed in a DO-41 package, which is a standard axial-lead package for through-hole mounting.

Features:

• Low Forward Voltage Drop: Enhances efficiency in power conversion.
• Fast Switching Speed: Reduces switching losses in high-frequency applications.
• High Surge Current Capability: Withstands transient overloads.
• Low Reverse Leakage Current: Improves power efficiency.
• RoHS Compliant: Meets environmental standards.

For detailed electrical characteristics and performance curves, refer to the official SHING datasheet.