Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

4N35 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
4N35MOTO/LITE965Yes

4N35 is an optocoupler manufactured by Toshiba.

The 4N35 is an optocoupler manufactured by Toshiba. It consists of a gallium arsenide infrared LED and a silicon phototransistor. Key specifications include:

  • Isolation Voltage: 5300 Vrms
  • Collector-Emitter Voltage (VCEO): 30 V
  • Collector Current (IC): 100 mA
  • Current Transfer Ratio (CTR): Minimum 100% at 10 mA input current
  • Input Forward Current (IF): 60 mA (maximum)
  • Forward Voltage (VF): 1.5 V (typical) at 10 mA
  • Operating Temperature Range: -55°C to +100°C
  • Package: 6-pin DIP (Dual In-line Package)

The 4N35 is commonly used for signal isolation, switching, and interfacing in various electronic applications.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • ZHBA1832R ,1188,ZIP8

    Manufacturer:** ZETEX / Diodes Incorporated **Part Number:** ZHBA1832R **Description:** The ZHBA1832R is a high-performance Schottky barrier diode designed for applications requiring low forward voltage drop and fast switching.

  • 46228 ,360,TQFP32

    Part Number:** 46228 **Manufacturer:** Not specified (generic or aftermarket part) **Specifications:** - **Material:** Typically made from high-grade steel or alloy for durability.

  • CD74HCT11E ,100,DIP14

    CD74HCT11E** from Intersil is a high-speed CMOS logic integrated circuit designed for digital applications.

  • HD61105,HIT,34,QFP

    TDA3611,PHI,34,DIP24


Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales