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HCF4012BE Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
HCF4012BESSS/ST849Yes

### Manufacturer: SSS/ST (Samsung Semiconductor / STMicroelectronics) ### Part Number: HCF4012BE ### Specifications: - **Logic Type**: Dual 4-Input NAND Gate - **Technology**: CMOS - **Supply Voltage Range**: 3V to 20V - **Operating Temperat

Manufacturer: SSS/ST (Samsung Semiconductor / STMicroelectronics)

Part Number: HCF4012BE

Specifications:

  • Logic Type: Dual 4-Input NAND Gate
  • Technology: CMOS
  • Supply Voltage Range: 3V to 20V
  • Operating Temperature Range: -55°C to +125°C
  • Package: DIP-14 (Dual In-Line Package, 14 pins)
  • Propagation Delay: Typically 60ns at 10V
  • Low Power Consumption: Suitable for battery-operated devices
  • High Noise Immunity: CMOS standard levels

Descriptions:

The HCF4012BE is a dual 4-input NAND gate integrated circuit fabricated in CMOS technology. It provides two independent 4-input NAND gates in a single package, making it useful for logic design applications requiring multiple inputs.

Features:

  • Wide Operating Voltage Range: 3V to 20V
  • High Noise Margin: Ensures reliable operation in noisy environments
  • Low Power Consumption: Ideal for portable and battery-powered applications
  • Balanced Propagation Delays: Ensures stable performance
  • Standard Pin Configuration: Compatible with industry-standard layouts

This IC is commonly used in digital systems, control circuits, and logic-based applications.

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