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1SMB5919BT3G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SMB5919BT3GONSEMI27747Yes

SMB5919BT3G** is a Schottky Barrier Diode manufactured by **ON Semiconductor**.

The SMB5919BT3G is a Schottky Barrier Diode manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Schottky Barrier Diode
  • Package: SMB (DO-214AA)
  • Configuration: Single Diode
  • Maximum Reverse Voltage (VR): 40V
  • Average Forward Current (IF): 5A
  • Peak Forward Surge Current (IFSM): 150A (non-repetitive)
  • Forward Voltage Drop (VF): 0.55V (typ) at 5A
  • Reverse Leakage Current (IR): 0.5mA (max) at 40V
  • Operating Junction Temperature (TJ): -65°C to +150°C
  • Storage Temperature Range: -65°C to +150°C

Descriptions:

  • Designed for high-efficiency rectification in power supply and switching applications.
  • Utilizes Schottky barrier technology for low forward voltage drop and fast switching.
  • Suitable for automotive, industrial, and consumer electronics applications.

Features:

  • Low forward voltage drop for reduced power loss.
  • High current capability with efficient thermal performance.
  • Lead-free and RoHS compliant.
  • Halogen-free (environmentally friendly).
  • AEC-Q101 qualified for automotive applications.

This diode is commonly used in DC-DC converters, reverse polarity protection, and freewheeling diodes in power circuits.

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