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MIP213 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MIP213PAN112Yes

MIP213** is a power MOSFET manufactured by **PAN (Panasonic Electronic Components)**.

The MIP213 is a power MOSFET manufactured by PAN (Panasonic Electronic Components). Below are the key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 12A
  • Pulsed Drain Current (IDM): 48A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 30W
  • On-Resistance (RDS(on)): 0.055Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2.0V (min) – 4.0V (max)
  • Input Capacitance (Ciss): 600pF (typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The MIP213 is a high-performance N-Channel MOSFET designed for power switching applications.
  • It features low on-resistance and fast switching speeds, making it suitable for DC-DC converters, motor control, and power management circuits.
  • Available in a TO-220AB package for efficient heat dissipation.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast switching capability for high-frequency applications.
  • High current handling with a continuous drain current of 12A.
  • Robust thermal performance with a power dissipation rating of 30W.
  • Avalanche energy rated for improved reliability in inductive load applications.

For exact datasheet details, refer to Panasonic's official documentation.

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