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MIP2E4D Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MIP2E4DPAN384Yes

MIP2E4D** is a **Dual N-Channel Enhancement Mode MOSFET** manufactured by **PAN (Panasonic Electronic Components)**.

The MIP2E4D is a Dual N-Channel Enhancement Mode MOSFET manufactured by PAN (Panasonic Electronic Components).

Specifications:

  • Type: Dual N-Channel Enhancement Mode MOSFET
  • Package: SOP-8 (Small Outline Package)
  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): 2.5A (per channel)
  • Power Dissipation (PD): 2W (total)
  • On-Resistance (RDS(on)): 0.15Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min), 2.5V (max)
  • Input Capacitance (Ciss): 120pF (typical)
  • Operating Temperature Range: -55°C to +150°C

Features:

  • Low On-Resistance for efficient power switching
  • Fast Switching Speed for high-frequency applications
  • Compact SOP-8 Package for space-saving designs
  • Dual MOSFET Configuration for integrated circuit solutions
  • Low Threshold Voltage for compatibility with low-voltage logic

Applications:

  • Power management circuits
  • DC-DC converters
  • Motor control systems
  • Load switching applications

This MOSFET is designed for low-voltage, high-efficiency switching in compact electronic devices.

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