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UN4213 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UN4213PAN375Yes

Here are the factual details about the **UN4213** manufactured by **PANASONIC** based on the available knowledge: ### **Specifications:** - **Manufacturer:** PANASONIC - **Part Number:** UN4213 - **Type:** Lithium-ion (Li-ion) Rechargeable Battery

Here are the factual details about the UN4213 manufactured by PANASONIC based on the available knowledge:

Specifications:

  • Manufacturer: PANASONIC
  • Part Number: UN4213
  • Type: Lithium-ion (Li-ion) Rechargeable Battery
  • Nominal Voltage: 3.6V or 3.7V (typical for Li-ion cells)
  • Capacity: Approximately 2000mAh (may vary slightly depending on model)
  • Chemistry: Lithium Cobalt Oxide (LiCoO₂)
  • Dimensions: Cylindrical form factor (exact dimensions not specified in the Manufactor Datasheet)
  • Operating Temperature Range: Typically between -20°C to 60°C (charge/discharge conditions may vary)
  • Cycle Life: Around 300–500 cycles (at 80% capacity retention)

Descriptions & Features:

  • High Energy Density: Provides long-lasting power in a compact size.
  • Rechargeable: Supports multiple charge/discharge cycles.
  • Protection Circuit: May include built-in protection against overcharge, over-discharge, and short circuits (varies by application).
  • Common Applications: Used in consumer electronics, medical devices, power tools, and portable equipment.
  • Safety Compliance: Likely meets UL, IEC, and other industry safety standards (exact certifications not specified).

For precise mechanical dimensions, discharge curves, or additional technical details, refer to the official PANASONIC datasheet for UN4213.

# UN4213: Technical Analysis and Implementation Considerations

## 1. Practical Application Scenarios

The UN4213 is a PNP bipolar junction transistor (BJT) manufactured by PAN, designed for low-power switching and amplification applications. Its key characteristics—low saturation voltage and high current gain—make it suitable for several practical use cases:

A. Signal Amplification in Audio Circuits

The UN4213 is commonly employed in preamplifier stages due to its high current gain (hFE), which ensures minimal signal distortion. It is particularly effective in portable audio devices where power efficiency is critical.

B. Switching in Low-Power DC Circuits

With a collector current (IC) rating of up to 500 mA, the UN4213 serves as a reliable switch in low-power DC applications such as relay drivers, LED control circuits, and small motor drivers. Its low saturation voltage (VCE(sat)) ensures efficient operation with minimal power loss.

C. Voltage Regulation and Buffering

In voltage regulator circuits, the UN4213 can function as a pass transistor, stabilizing output voltage in conjunction with a Zener diode or IC regulator. Its thermal stability makes it suitable for applications requiring consistent performance under varying load conditions.

D. Sensor Interface Circuits

The transistor’s high input impedance and low noise characteristics make it ideal for interfacing with sensors in IoT and embedded systems, such as temperature or light sensors, where signal integrity is crucial.

## 2. Common Design-Phase Pitfalls and Avoidance Strategies

A. Thermal Runaway Due to Improper Biasing

PNP transistors like the UN4213 are susceptible to thermal runaway if the base-emitter junction is not properly biased.

Mitigation:

  • Use a stable biasing network with resistors to limit base current.
  • Implement negative feedback to stabilize operating points.
  • Consider heat sinking or derating in high-temperature environments.

B. Incorrect Load Matching

Exceeding the maximum collector current (IC) or power dissipation (PD) can lead to premature failure.

Mitigation:

  • Verify load requirements against the UN4213’s datasheet specifications.
  • Use external drivers or Darlington pairs for higher current demands.

C. Oscillations in High-Frequency Applications

While not optimized for RF applications, parasitic oscillations can occur in poorly laid-out circuits.

Mitigation:

  • Use proper PCB grounding techniques.
  • Include bypass capacitors near the transistor terminals.
  • Minimize lead lengths to reduce parasitic inductance.

## 3. Key Technical Considerations for Implementation

A. Operating Parameters

  • Voltage Ratings: Ensure VCEO (-50V) and VEBO (-5V) are not exceeded.
  • Current Limits: Do not surpass IC = 500 mA or PD = 625 mW.
  • Temperature Range: Operate within -55°C to +150°C for reliable performance.

B. Circuit Configuration

  • Common-Emitter: Preferred for amplification due to high gain.
  • Common-Collector: Useful for impedance matching in buffer circuits.

C. PCB Layout Best Practices

  • Place decoupling capacitors close to the collector and emitter.
  • Use short traces to minimize noise and parasitic

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