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2SB643-S Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB643-SPAN500Yes

2SB643-S** is a PNP bipolar junction transistor (BJT) manufactured by **PAN (Panasonic Electronic Components)**.

The 2SB643-S is a PNP bipolar junction transistor (BJT) manufactured by PAN (Panasonic Electronic Components). Below are its key specifications, descriptions, and features:

Manufacturer:

  • PAN (Panasonic Electronic Components)

Specifications:

  • Transistor Type: PNP
  • Collector-Emitter Voltage (VCEO): -50V
  • Collector-Base Voltage (VCBO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (Ptot): 25W
  • DC Current Gain (hFE): 60-320 (at IC = -1A, VCE = -5V)
  • Operating Junction Temperature (Tj): 150°C
  • Storage Temperature Range (Tstg): -55°C to +150°C

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • High current capability with a maximum collector current of -3A.
  • Moderate DC current gain (hFE) range, making it suitable for various circuit designs.
  • Robust power dissipation of 25W, allowing for reliable performance in power applications.
  • Available in a TO-220 package for efficient heat dissipation.
  • Commonly used in power supply circuits, audio amplifiers, and motor control applications.

This transistor is widely used in electronic circuits requiring medium-power PNP transistors with good reliability and performance.

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