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2SB948A-Q Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB948A-QPAN400Yes

2SB948A-Q** is a PNP bipolar junction transistor (BJT) manufactured by **PAN (Panasonic)**.

The 2SB948A-Q is a PNP bipolar junction transistor (BJT) manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCB): -60V
  • Maximum Collector-Emitter Voltage (VCE): -50V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PD): 25W
  • DC Current Gain (hFE): 60 to 320 (varies with operating conditions)
  • Operating Junction Temperature (Tj): -55°C to +150°C
  • Package Type: TO-220

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for medium-power applications in audio amplifiers, power supplies, and motor control circuits.
  • Features low saturation voltage for efficient switching performance.

Features:

  • High current capability (up to 3A).
  • Low collector-emitter saturation voltage.
  • Robust TO-220 package for effective heat dissipation.
  • Wide range of DC current gain (hFE) for flexibility in circuit design.

For exact performance characteristics, refer to the manufacturer's datasheet.

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