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2SC1359B Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC1359BPAN490Yes

2SC1359B** is a silicon NPN epitaxial planar transistor manufactured by **PAN (Panasonic)**.

The 2SC1359B is a silicon NPN epitaxial planar transistor manufactured by PAN (Panasonic).

Key Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 25V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 150mA
  • Total Power Dissipation (PTOT): 300mW
  • DC Current Gain (hFE): 60 to 320 (depending on operating conditions)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions and Features:

  • Designed for general-purpose amplification and switching applications.
  • Low noise and high gain, making it suitable for RF and audio applications.
  • Epitaxial planar construction ensures stable performance.
  • Available in TO-92 package for easy mounting.

This transistor is commonly used in low-power amplifiers, signal processing circuits, and switching applications.

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