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2SD1266-P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD1266-PPAN100Yes

2SD1266-P** is a silicon NPN epitaxial planar transistor manufactured by **PAN (Panasonic)**.

The 2SD1266-P is a silicon NPN epitaxial planar transistor manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Manufacturer:

  • PAN (Panasonic)

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 60V
  • Collector-Base Voltage (VCBO): 80V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 3A
  • Power Dissipation (PC): 30W
  • DC Current Gain (hFE): 60-320 (at IC = 0.5A, VCE = 2V)
  • Transition Frequency (fT): 20MHz
  • Operating Temperature Range: -55°C to +150°C

Package:

  • TO-220F (Fully Molded Plastic Package)

Descriptions & Features:

  • Designed for high-power amplification and switching applications.
  • Low saturation voltage ensures efficient switching performance.
  • High current capability (up to 3A).
  • Fully molded TO-220F package provides good thermal dissipation.
  • Suitable for power supply circuits, motor drivers, and general-purpose amplification.

This transistor is commonly used in power regulation, audio amplifiers, and switching circuits due to its robustness and reliability.

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