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MIP3E3B Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MIP3E3BPAN155Yes

MIP3E3B** is a P-channel MOSFET manufactured by **PAN (Panasonic)**.

The MIP3E3B is a P-channel MOSFET manufactured by PAN (Panasonic). Below are its key specifications, descriptions, and features:

Specifications:

  • Type: P-Channel Power MOSFET
  • Drain-Source Voltage (VDS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -6.3A
  • Pulsed Drain Current (IDM): -25A
  • Power Dissipation (PD): 2.5W
  • On-Resistance (RDS(on)): 60mΩ (max) at VGS = -10V
  • Threshold Voltage (VGS(th)): -1.0V to -2.5V
  • Package: SOP-8

Descriptions:

  • Designed for low-voltage, high-efficiency switching applications.
  • Suitable for power management in portable devices, battery protection, and load switching.
  • Features low on-resistance for reduced conduction losses.

Features:

  • Low On-Resistance: Minimizes power loss in conduction.
  • Fast Switching Speed: Enhances efficiency in switching applications.
  • Compact SOP-8 Package: Space-saving surface-mount design.
  • High Current Handling: Supports up to -6.3A continuous current.
  • Wide Gate-Source Voltage Range: ±20V for robust operation.

This MOSFET is commonly used in DC-DC converters, power switches, and battery management systems.

(Note: Always refer to the official datasheet for precise details before implementation.)

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