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PU4111 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
PU4111PAN600Yes

PU4111** is a **P-Channel Enhancement Mode MOSFET** manufactured by **PAN (Panjit International Inc.

The PU4111 is a P-Channel Enhancement Mode MOSFET manufactured by PAN (Panjit International Inc.).

Key Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -4.3A
  • Pulsed Drain Current (IDM): -17A
  • Power Dissipation (PD): 2.5W
  • On-Resistance (RDS(ON)): 85mΩ (at VGS = -10V)
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Package: TO-252 (DPAK)

Features:

  • Low on-resistance for efficient power handling
  • Fast switching performance
  • High reliability and ruggedness
  • RoHS compliant
  • Suitable for power management applications

Applications:

  • DC-DC converters
  • Power management in portable devices
  • Battery protection circuits
  • Load switching

This MOSFET is designed for high-efficiency, low-power-loss applications.

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