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2SB10730RL Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB10730RLPANASONIC1000Yes

2SB10730RL** is a PNP bipolar junction transistor (BJT) manufactured by **Panasonic**.

The 2SB10730RL is a PNP bipolar junction transistor (BJT) manufactured by Panasonic. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCB): -50V
  • Maximum Collector-Emitter Voltage (VCE): -50V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Continuous Collector Current (IC): -3A
  • Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 120 to 560 (at IC = -1A, VCE = -5V)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-252 (DPAK)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • Features a high current gain (hFE) for efficient signal amplification.

Features:

  • Low saturation voltage for improved efficiency.
  • High current capability (up to 3A).
  • Surface-mount package (TO-252) for compact PCB designs.
  • Reliable performance under specified operating conditions.

This transistor is commonly used in power management, audio amplifiers, and switching circuits. For detailed application notes, refer to Panasonic’s official datasheet.

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