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Home > PANASONIC > 2SB1176(U)-0

2SB1176(U)-0 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1176(U)-0PANASONIC990Yes

PANASONIC 2SB1176(U)-0** is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications.

The PANASONIC 2SB1176(U)-0 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (PC): 900mW
  • DC Current Gain (hFE): 60-320 (varies by operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92 (through-hole)

Descriptions:

  • Designed for low-power amplification and switching.
  • Suitable for audio, signal processing, and driver circuits.
  • Features a compact TO-92 package for easy PCB mounting.

Features:

  • High voltage capability (up to -50V).
  • Moderate current handling (1A).
  • Good linearity in amplification applications.
  • Reliable performance in various electronic circuits.

This transistor is commonly used in consumer electronics, power management circuits, and small signal amplification. Always refer to the datasheet for detailed operating conditions.

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