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2SD601A(TX) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SD601A(TX)PANASONIC2915Yes

part 2SD601A(TX)** is a **PNP silicon epitaxial planar transistor** manufactured by **Panasonic**.

The part 2SD601A(TX) is a PNP silicon epitaxial planar transistor manufactured by Panasonic. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Material: Silicon (Si)
  • Structure: Epitaxial Planar
  • Maximum Collector-Base Voltage (Vcbo): -50V
  • Maximum Collector-Emitter Voltage (Vceo): -50V
  • Maximum Emitter-Base Voltage (Vebo): -5V
  • Collector Current (Ic): -3A
  • Total Power Dissipation (Pt): 25W
  • Junction Temperature (Tj): 150°C
  • Storage Temperature (Tstg): -55°C to +150°C
  • DC Current Gain (hFE): 60 to 320 (at Ic = 1A, Vce = -5V)
  • Transition Frequency (ft): 10MHz (Typical)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for medium-power applications in audio, power supply, and control circuits.
  • Features low saturation voltage and high current capability.

Features:

  • High reliability due to epitaxial planar construction.
  • Low collector-emitter saturation voltage (Vce(sat)).
  • Good linearity in amplification.
  • Plastic TO-220 package for efficient heat dissipation.

This transistor is commonly used in power supply circuits, motor control, and audio amplifiers.

(Note: Always refer to the official Panasonic datasheet for precise application guidelines.)

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