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Detailed technical information and Application Scenarios
| PartNumber | Manufactor | Quantity | Availability |
|---|---|---|---|
| BC847BPN | PHI | 150 | Yes |
The BC847BPN is a general-purpose NPN transistor manufactured by PHI (formerly Philips Semiconductors). Here are the key specifications from the Manufactor Datasheet:
1. Type: NPN Bipolar Junction Transistor (BJT)
2. Package: SOT-363 (SC-88)
3. Maximum Collector-Base Voltage (VCB): 50V
4. Maximum Collector-Emitter Voltage (VCE): 45V
5. Maximum Emitter-Base Voltage (VEB): 6V
6. Continuous Collector Current (IC): 100mA
7. Total Power Dissipation (Ptot): 250mW
8. DC Current Gain (hFE): Typically 110–800 (depending on variant)
9. Transition Frequency (fT): 100MHz
10. Operating Temperature Range: -55°C to +150°C
The BC847BPN is commonly used in amplification and switching applications.
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