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BC847BPN Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC847BPNPHI150Yes

BC847BPN is a general-purpose NPN transistor manufactured by PHI (formerly Philips Semiconductors).

The BC847BPN is a general-purpose NPN transistor manufactured by PHI (formerly Philips Semiconductors). Here are the key specifications from the Manufactor Datasheet:

1. Type: NPN Bipolar Junction Transistor (BJT)

2. Package: SOT-363 (SC-88)

3. Maximum Collector-Base Voltage (VCB): 50V

4. Maximum Collector-Emitter Voltage (VCE): 45V

5. Maximum Emitter-Base Voltage (VEB): 6V

6. Continuous Collector Current (IC): 100mA

7. Total Power Dissipation (Ptot): 250mW

8. DC Current Gain (hFE): Typically 110–800 (depending on variant)

9. Transition Frequency (fT): 100MHz

10. Operating Temperature Range: -55°C to +150°C

The BC847BPN is commonly used in amplification and switching applications.

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