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BD170 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BD170PHI300Yes

BD170 is a PNP bipolar junction transistor (BJT) manufactured by PHI (formerly Philips).

The BD170 is a PNP bipolar junction transistor (BJT) manufactured by PHI (formerly Philips).

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -45V
  • Collector-Emitter Voltage (VCEO): -45V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (Ptot): 1W
  • DC Current Gain (hFE): 40-250 (depending on operating conditions)
  • Transition Frequency (fT): 50MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The BD170 is a medium-power PNP transistor designed for general-purpose amplification and switching applications. It is commonly used in audio amplifiers, power regulators, and driver circuits.

Features:

  • High current capability (up to 1A)
  • Low saturation voltage
  • Complementary to NPN transistor BD139
  • TO-126 package (similar to TO-220 but with a smaller footprint)

For exact performance characteristics, always refer to the official datasheet.

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