Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

Product Catalog Contact Us
Home > PHI02 > BF422

BF422 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BF422PHI1006Yes

BF422 is a high-voltage NPN transistor manufactured by Toshiba.

The BF422 is a high-voltage NPN transistor manufactured by Toshiba. Below are its key specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Collector-Base Voltage (VCBO): 250V
  • Collector-Emitter Voltage (VCEO): 200V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Total Power Dissipation (PTOT): 800mW
  • Transition Frequency (fT): 50MHz
  • DC Current Gain (hFE): 40 to 250 (at VCE = 5V, IC = 2mA)
  • Package: TO-92

These specifications are based on Toshiba's datasheet for the BF422 transistor.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • A3546 ,120,QFN32

    Part A3546 is a component manufactured by PHI (Performance Health Instruments).

  • TDA3571BQ ,500,

    TDA3571BQ** is a monolithic integrated circuit manufactured by **PHILIPS (PHI)**.

  • PCD3327P ,132,DIP18

    PCD3327P is a DTMF (Dual-Tone Multi-Frequency) receiver IC manufactured by Philips (PHI).

  • KS-22280-L7W,GRAYHILL,36,DIP9

    HM3-65768AN-5,MHS,36,DIP20

Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales