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BF451 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BF451PHI2000Yes

BF451 is a high-frequency, NPN bipolar junction transistor (BJT) manufactured by PHI (Pulse Electronics).

The BF451 is a high-frequency, NPN bipolar junction transistor (BJT) manufactured by PHI (Pulse Electronics).

Specifications:

  • Type: NPN Silicon BJT
  • Package: TO-92 (or equivalent)
  • Collector-Base Voltage (VCB): 30V
  • Collector-Emitter Voltage (VCE): 25V
  • Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 625mW
  • Transition Frequency (fT): 300MHz (typical)
  • DC Current Gain (hFE): 40-250 (varies with operating conditions)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The BF451 is a general-purpose NPN transistor designed for high-frequency amplification and switching applications. It is commonly used in RF circuits, oscillators, and signal processing due to its high transition frequency.

Features:

  • High-frequency performance
  • Low noise operation
  • Suitable for small-signal amplification
  • Compact TO-92 package for easy PCB mounting

This information is based on standard manufacturer datasheets and may vary slightly depending on specific production batches. Always refer to the latest datasheet for precise details.

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