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Detailed technical information and Application Scenarios
| PartNumber | Manufactor | Quantity | Availability |
|---|---|---|---|
| BSP126 | PHI | 859 | Yes |
The BSP126 is a P-channel enhancement mode MOSFET manufactured by NXP Semiconductors. Below are its key specifications:
1. Drain-Source Voltage (VDS): -60V
2. Gate-Source Voltage (VGS): ±20V
3. Continuous Drain Current (ID): -0.4A
4. Power Dissipation (Ptot): 1W
5. On-State Resistance (RDS(on)): 3.5Ω (max) at VGS = -10V, ID = -0.2A
6. Threshold Voltage (VGS(th)): -1V to -3V
7. Operating Junction Temperature (Tj): -55°C to +150°C
8. Package: SOT23 (3-pin)
These specifications are based on NXP's official datasheet for the BSP126.
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