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BSP126 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BSP126PHI859Yes

BSP126 is a P-channel enhancement mode MOSFET manufactured by NXP Semiconductors.

The BSP126 is a P-channel enhancement mode MOSFET manufactured by NXP Semiconductors. Below are its key specifications:

1. Drain-Source Voltage (VDS): -60V

2. Gate-Source Voltage (VGS): ±20V

3. Continuous Drain Current (ID): -0.4A

4. Power Dissipation (Ptot): 1W

5. On-State Resistance (RDS(on)): 3.5Ω (max) at VGS = -10V, ID = -0.2A

6. Threshold Voltage (VGS(th)): -1V to -3V

7. Operating Junction Temperature (Tj): -55°C to +150°C

8. Package: SOT23 (3-pin)

These specifications are based on NXP's official datasheet for the BSP126.

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