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PMBTA92T/R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
PMBTA92T/RPHI488Yes

PMBTA92T/R** is a PNP bipolar junction transistor (BJT) manufactured by **PHI (Philips Semiconductors, now NXP Semiconductors)**.

The PMBTA92T/R is a PNP bipolar junction transistor (BJT) manufactured by PHI (Philips Semiconductors, now NXP Semiconductors).

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCB): -300V
  • Maximum Collector-Emitter Voltage (VCE): -300V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Continuous Collector Current (IC): -500mA
  • Total Power Dissipation (Ptot): 625mW
  • DC Current Gain (hFE): 25 (min) to 40 (max) at IC = -100mA, VCE = -10V
  • Transition Frequency (fT): 50MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (Surface Mount)

Descriptions:

The PMBTA92T/R is a high-voltage PNP transistor designed for general-purpose amplification and switching applications. It is suitable for use in power management, signal amplification, and driver circuits.

Features:

  • High voltage capability
  • Low saturation voltage
  • Suitable for surface-mount applications (SOT-23 package)
  • RoHS compliant

This transistor is commonly used in power supplies, inverters, and audio amplifiers.

(Note: Always refer to the latest datasheet for updated specifications.)

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