Professional IC Distribution & Technical Solutions

The 2SC5508-T2B-A is a high-frequency transistor manufactured by Renesas Electronics. Below are its key specifications, descriptions, and features:

Specifications:

• Type: NPN Silicon Epitaxial Planar Transistor
• Application: High-frequency amplification (VHF/UHF bands)
• Collector-Base Voltage (VCBO): 20V
• Collector-Emitter Voltage (VCEO): 12V
• Emitter-Base Voltage (VEBO): 3V
• Collector Current (IC): 50mA
• Total Power Dissipation (PT): 150mW
• Transition Frequency (fT): 7GHz (typical)
• Noise Figure (NF): 1.2dB (typical at 1GHz)
• Gain (hFE): 20 to 60 (at VCE=3V, IC=5mA)
• Package: SOT-323 (Miniature surface-mount package)

Description:

The 2SC5508-T2B-A is designed for low-noise, high-frequency amplification in applications such as RF front-end circuits, mobile communication devices, and wireless modules. Its high fT and low noise figure make it suitable for VHF/UHF signal processing.

Features:

• High transition frequency (7GHz) for excellent high-frequency performance
• Low noise figure (1.2dB @ 1GHz) for improved signal clarity
• Compact SOT-323 package for space-constrained designs
• Optimized for RF amplification in communication systems

This transistor is commonly used in cellular phones, wireless LAN modules, and other RF applications requiring stable high-frequency performance.

(Note: Always refer to the official Renesas datasheet for precise details before implementation.)