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2SC5508-T2B-A Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC5508-T2B-ARenesas3500Yes

2SC5508-T2B-A** is a high-frequency transistor manufactured by **Renesas Electronics**.

The 2SC5508-T2B-A is a high-frequency transistor manufactured by Renesas Electronics. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Application: High-frequency amplification (VHF/UHF bands)
  • Collector-Base Voltage (VCBO): 20V
  • Collector-Emitter Voltage (VCEO): 12V
  • Emitter-Base Voltage (VEBO): 3V
  • Collector Current (IC): 50mA
  • Total Power Dissipation (PT): 150mW
  • Transition Frequency (fT): 7GHz (typical)
  • Noise Figure (NF): 1.2dB (typical at 1GHz)
  • Gain (hFE): 20 to 60 (at VCE=3V, IC=5mA)
  • Package: SOT-323 (Miniature surface-mount package)

Description:

The 2SC5508-T2B-A is designed for low-noise, high-frequency amplification in applications such as RF front-end circuits, mobile communication devices, and wireless modules. Its high fT and low noise figure make it suitable for VHF/UHF signal processing.

Features:

  • High transition frequency (7GHz) for excellent high-frequency performance
  • Low noise figure (1.2dB @ 1GHz) for improved signal clarity
  • Compact SOT-323 package for space-constrained designs
  • Optimized for RF amplification in communication systems

This transistor is commonly used in cellular phones, wireless LAN modules, and other RF applications requiring stable high-frequency performance.

(Note: Always refer to the official Renesas datasheet for precise details before implementation.)

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