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The Renesas part 2SK975TZ-E is a high-performance power MOSFET designed for various switching applications. Below are its key specifications, descriptions, and features:

Specifications:

• Type: N-Channel Power MOSFET
• Drain-Source Voltage (V_DSS): 500V
• Continuous Drain Current (I_D): 15A
• Pulsed Drain Current (I_DM): 60A
• Power Dissipation (P_D): 150W
• Gate-Source Voltage (V_GS): ±30V
• On-Resistance (R_DS(on)): 0.35Ω (max) at V_GS = 10V
• Input Capacitance (C_iss): 1800pF (typical)
• Output Capacitance (C_oss): 300pF (typical)
• Reverse Transfer Capacitance (C_rss): 50pF (typical)
• Turn-On Delay Time (t_d(on)): 15ns (typical)
• Turn-Off Delay Time (t_d(off)): 50ns (typical)
• Operating Temperature Range: -55°C to +150°C
• Package: TO-220F (isolated type)

Descriptions:

The 2SK975TZ-E is a high-voltage, low-on-resistance MOSFET optimized for fast switching applications. It is suitable for power supplies, motor control, and industrial inverters, offering high efficiency and reliability.

Features:

• High Voltage Capability: Supports up to 500V drain-source voltage.
• Low On-Resistance: Minimizes conduction losses.
• Fast Switching Speed: Enhances efficiency in high-frequency circuits.
• High Current Handling: Capable of 15A continuous drain current.
• Isolated Package (TO-220F): Provides electrical isolation for improved thermal management.
• Wide Temperature Range: Operates reliably in harsh environments.

This MOSFET is designed for demanding power electronics applications where high voltage and efficient switching performance are required.