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RF3809 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
RF3809RFMD 1112Yes

RF3809 is a high-performance RF power transistor manufactured by RFMD (RF Micro Devices).

The RF3809 is a high-performance RF power transistor manufactured by RFMD (RF Micro Devices). Below are its key specifications, descriptions, and features:

Specifications:

  • Frequency Range: 1805–1880 MHz
  • Output Power: 12W (typical)
  • Gain: 16 dB (typical)
  • Efficiency: 40% (typical)
  • Supply Voltage (VDD): 3.4V
  • Package Type: 8-lead DFN (Dual Flat No-Lead)
  • Operating Temperature: -40°C to +85°C

Descriptions:

The RF3809 is a high-efficiency, high-linearity RF power amplifier designed for applications in the 1805–1880 MHz frequency range. It is optimized for use in wireless infrastructure, small-cell base stations, and other RF communication systems.

Features:

  • High power-added efficiency (PAE)
  • Excellent linearity for modulation schemes such as LTE and WCDMA
  • Integrated input and output matching networks
  • Low thermal resistance
  • RoHS-compliant package

This information is based on the manufacturer's datasheet and technical documentation.

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