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2SA1759-T100P Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1759-T100PROHM101Yes

Manufacturer:** ROHM **Part Number:** 2SA1759-T100P ### **Specifications:** - **Transistor Type:** PNP Bipolar Junction Transistor (BJT) - **Collector-Base Voltage (VCBO):** -50V - **Collector-Emitter Voltage (VCEO):** -50V - **Emitter-Base

Manufacturer: ROHM

Part Number: 2SA1759-T100P

Specifications:

  • Transistor Type: PNP Bipolar Junction Transistor (BJT)
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -150mA
  • Power Dissipation (Pc): 150mW
  • DC Current Gain (hFE): 120–560 (at VCE = -6V, IC = -2mA)
  • Transition Frequency (fT): 80MHz (Typ.)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TUMT3 (SC-75, Ultra-Miniature SMD Package)

Descriptions:

The 2SA1759-T100P is a high-frequency PNP transistor designed for amplification and switching applications. It features low saturation voltage and high current gain, making it suitable for compact, low-power circuits.

Features:

  • High-Speed Switching: Optimized for fast response in signal processing.
  • Low Saturation Voltage: Enhances efficiency in switching applications.
  • Miniature Package (SC-75): Ideal for space-constrained PCB designs.
  • Wide hFE Range: Ensures stable amplification characteristics.

For detailed application notes, refer to ROHM's official datasheet.

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