Professional IC Distribution & Technical Solutions

Global leader in semiconductor components distribution and technical support services, empowering your product innovation and industry advancement

BR93L76RFJ-WE2 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BR93L76RFJ-WE2ROHM200Yes

BR93L76RFJ-WE2 is a serial EEPROM (Electrically Erasable Programmable Read-Only Memory) IC manufactured by ROHM Semiconductor.

The BR93L76RFJ-WE2 is a serial EEPROM (Electrically Erasable Programmable Read-Only Memory) IC manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Memory Type: EEPROM
  • Memory Size: 8Kbit (1024 x 8)
  • Interface Type: SPI (Serial Peripheral Interface)
  • Supply Voltage (VCC): 1.7V to 5.5V
  • Operating Temperature Range: -40°C to +85°C
  • Write Cycle Endurance: 1,000,000 cycles
  • Data Retention: 100 years
  • Package Type: SOP-8 (150mil)
  • Write Protection: Software and hardware protection
  • Page Size: 32 bytes
  • Clock Frequency (Max): 5MHz (at 5V)

Descriptions:

The BR93L76RFJ-WE2 is a low-power, high-reliability EEPROM with SPI interface, designed for applications requiring non-volatile memory storage. It supports a wide voltage range, making it suitable for battery-powered and industrial systems.

Features:

  • Low Power Consumption: Ideal for battery-operated devices.
  • Wide Voltage Range: Operates from 1.7V to 5.5V.
  • High Reliability: Long data retention (100 years) and high endurance (1M write cycles).
  • SPI Interface: Supports standard SPI communication.
  • Hardware & Software Write Protection: Prevents accidental data corruption.
  • Industrial Temperature Range: Suitable for harsh environments (-40°C to +85°C).
  • Compact Package: SOP-8 (150mil) footprint.

This EEPROM is commonly used in automotive, industrial, and consumer electronics for data logging, configuration storage, and parameter settings.

# Application Scenarios and Design Phase Pitfall Avoidance for the BR93L76RFJ-WE2

The BR93L76RFJ-WE2 is a serial EEPROM (Electrically Erasable Programmable Read-Only Memory) designed for applications requiring reliable non-volatile data storage. With its 2-wire I²C interface, 64-Kbit capacity, and wide operating voltage range (1.7V to 5.5V), this component is well-suited for various embedded systems where low-power operation and data retention are critical.

## Key Application Scenarios

1. Consumer Electronics

The BR93L76RFJ-WE2 is commonly used in smart home devices, wearables, and IoT sensors where configuration settings, calibration data, or user preferences must be stored persistently. Its low power consumption makes it ideal for battery-operated devices.

2. Automotive Systems

In automotive applications, this EEPROM can store critical data such as mileage, fault logs, or infotainment settings. Its high endurance (1 million write cycles) and wide temperature range (-40°C to +85°C) ensure reliable performance in harsh environments.

3. Industrial Automation

Industrial controllers, PLCs, and sensor modules often utilize the BR93L76RFJ-WE2 to retain operational parameters and calibration data. The I²C interface simplifies integration with microcontrollers, while its high noise immunity ensures stable communication in electrically noisy environments.

4. Medical Devices

Medical equipment, such as portable monitors and diagnostic tools, benefit from the EEPROM’s ability to store patient data and device configurations securely. The low standby current helps prolong battery life in portable medical applications.

## Design Phase Pitfall Avoidance

To maximize the performance and reliability of the BR93L76RFJ-WE2 in a design, engineers should consider the following potential pitfalls:

1. Improper I²C Bus Termination

Unterminated or improperly terminated I²C lines can lead to signal reflections and communication errors. Ensure pull-up resistors (typically 4.7kΩ to 10kΩ) are correctly sized based on bus capacitance and operating voltage.

2. Voltage Fluctuations

Although the BR93L76RFJ-WE2 supports a wide voltage range, sudden power drops during write operations can corrupt data. Implement power-on reset (POR) circuits or brown-out detection to prevent incomplete writes.

3. Excessive Write Cycles

Frequent writes to the same memory location can degrade the EEPROM over time. To extend lifespan, implement wear-leveling algorithms or buffer frequently changing data in RAM before periodic EEPROM updates.

4. Electromagnetic Interference (EMI)

In high-noise environments, EMI can disrupt I²C communication. Use twisted-pair wiring, shielded cables, or ferrite beads to minimize interference.

5. Incorrect Addressing

The BR93L76RFJ-WE2 supports multiple device addresses via external pins. Misconfiguring these pins can lead to bus conflicts. Double-check address pin connections to ensure proper device recognition.

By understanding these application scenarios and proactively addressing potential design challenges, engineers can effectively integrate the BR93L76RFJ-WE2 into their systems while ensuring long-term reliability and performance.

Request Quotation

Part Number:
Quantity:
Target Price($USD):
Email:
Contact Person:
Additional Part Number
Quantity (Additional)
Special Requirements
Verification: =

Recommended Products

  • BD3702FV ,951,TSSOP28

    BD3702FV Manufacturer: ROHM** ### **Specifications:** - **Type:** 4-channel input / 2-channel output audio selector IC - **Operating Voltage:** 4.

  • RQW180N03TB ,2360,SOW8

    RQW180N03TB** is an N-channel MOSFET manufactured by **ROHM Semiconductor**.

  • BA10393 ,200,DIP8

    Manufacturer:** ROHM Semiconductor **Part Number:** BA10393 ### **Specifications:** - **Type:** Dual Operational Amplifier (Op-Amp) - **Supply Voltage Range:** ±1.

  • M54537P,MIT,18,DIP16

    A1-2541-5,HARRIS,18,CDIP14


Sales Support

Our sales team is ready to assist with:

  • Fast quotation
  • Price Discount
  • Technical specifications
Contact sales