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1SS400SMT2R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS400SMT2RROHM288000Yes

SS400SMT2R** is a Schottky barrier diode manufactured by **ROHM Semiconductor**.

The SS400SMT2R is a Schottky barrier diode manufactured by ROHM Semiconductor. Below are the factual specifications, descriptions, and features:

Specifications:

  • Part Number: SS400SMT2R
  • Manufacturer: ROHM
  • Type: Schottky Barrier Diode
  • Package: SMT (Surface Mount Technology)
  • Configuration: Single Diode
  • Forward Voltage (VF): 0.55V (typical) @ 1A
  • Reverse Voltage (VR): 40V
  • Average Rectified Current (IO): 1A
  • Peak Forward Surge Current (IFSM): 30A
  • Reverse Leakage Current (IR): 0.5mA (max) @ 40V
  • Operating Temperature Range: -55°C to +125°C
  • Junction Temperature (TJ): 125°C

Description:

The SS400SMT2R is a high-efficiency Schottky barrier diode designed for low-power loss and high-speed switching applications. It features a low forward voltage drop and minimal reverse leakage, making it suitable for power supply circuits, reverse polarity protection, and DC-DC converters.

Features:

  • Low Forward Voltage (VF): Enhances efficiency in power applications.
  • High Reverse Voltage (40V): Suitable for moderate voltage applications.
  • Fast Switching Speed: Ideal for high-frequency circuits.
  • Compact SMT Package: Space-saving design for modern PCB layouts.
  • Low Reverse Leakage: Improves energy efficiency.

This diode is commonly used in power management, automotive electronics, and portable devices.

(Note: Always refer to the official ROHM datasheet for precise technical details.)

# 1SS400SMT2R: Technical Analysis and Implementation Guide

## Practical Application Scenarios

The 1SS400SMT2R is a high-speed switching diode from ROHM, designed for surface-mount applications. Its key characteristics—low forward voltage, fast switching speed, and compact SMAF package—make it suitable for several critical applications:

1. Signal Clipping and Protection

  • Used in audio and RF circuits to clip excessive signal amplitudes, preventing downstream component damage.
  • Protects sensitive ICs from voltage transients in communication modules.

2. High-Speed Switching Circuits

  • Ideal for high-frequency rectification in switching power supplies (up to 100 MHz).
  • Employed in pulse and digital logic circuits where fast recovery time (<4 ns) minimizes signal distortion.

3. Reverse Polarity Protection

  • Integrated into battery-powered devices (e.g., IoT sensors) to block reverse current flow, enhancing system reliability.

4. RF and Microwave Detection

  • Functions as a detector diode in low-power RF applications due to its low junction capacitance (~2 pF).

## Common Design-Phase Pitfalls and Avoidance Strategies

1. Thermal Management Oversights

  • Pitfall: Excessive forward current (beyond 150 mA) can cause overheating in compact layouts.
  • Solution: Ensure proper PCB copper dissipation or use a heatsink if operating near max ratings.

2. Inadequate Reverse Voltage Margin

  • Pitfall: Operating near the 40 V reverse voltage limit risks breakdown during voltage spikes.
  • Solution: Derate to 70–80% of max rating (e.g., ≤32 V) for robust performance.

3. Signal Integrity Issues in High-Frequency Circuits

  • Pitfall: Parasitic inductance from long traces degrades switching performance.
  • Solution: Minimize trace lengths and use ground planes to reduce parasitic effects.

4. Incorrect PCB Footprint Implementation

  • Pitfall: Misaligned SMAF pads cause poor solder joints or mechanical stress.
  • Solution: Follow ROHM’s recommended land pattern (2.8 × 1.6 mm) with proper solder mask clearance.

## Key Technical Considerations for Implementation

1. Forward Voltage vs. Current Tradeoff

  • At 150 mA, *VF* is typically 0.95 V. For low-power designs, verify efficiency losses are acceptable.

2. Dynamic Response

  • Fast recovery time (<4 ns) suits high-speed applications but requires careful EMI mitigation (e.g., shielding).

3. ESD Sensitivity

  • Although robust, follow ESD handling protocols (e.g., grounded workstations) to prevent latent damage.

4. Alternatives for Harsh Environments

  • For high-temperature applications (>125°C), consider diodes with higher thermal ratings.

By addressing these factors, designers can fully leverage the 1SS400SMT2R’s capabilities while avoiding common pitfalls.

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