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The 2SB1236A is a PNP silicon epitaxial planar transistor manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

• Transistor Type: PNP
• Maximum Collector-Base Voltage (VCBO): -50V
• Maximum Collector-Emitter Voltage (VCEO): -50V
• Maximum Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -1.5A
• Total Power Dissipation (PT): 1W
• Junction Temperature (Tj): 150°C
• Storage Temperature Range (Tstg): -55°C to +150°C
• DC Current Gain (hFE): 60 to 320 (depending on conditions)
• Transition Frequency (fT): 80MHz (typical)

Description:

• Designed for general-purpose amplification and switching applications.
• Suitable for low-frequency and medium-speed switching circuits.
• Encased in a TO-126 package for efficient heat dissipation.

Features:

• High Voltage Tolerance: Supports up to -50V (VCEO).
• Moderate Current Handling: Capable of -1.5A collector current.
• Good DC Gain: Offers a wide hFE range (60–320).
• Fast Switching Speed: Transition frequency of 80MHz.
• Reliable Performance: Stable operation across industrial temperature ranges.

This transistor is commonly used in audio amplifiers, power regulators, and switching circuits. For detailed application notes, refer to ROHM’s official datasheet.