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2SC5734K Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC5734KROHM225Yes

2SC5734K** is a high-frequency NPN silicon epitaxial planar transistor manufactured by **ROHM Semiconductor**.

The 2SC5734K is a high-frequency NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCB): 30V
  • Maximum Collector-Emitter Voltage (VCE): 20V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Maximum Collector Current (IC): 150mA
  • Total Power Dissipation (PD): 200mW
  • Transition Frequency (fT): 2.5GHz (typical)
  • Noise Figure (NF): 1.5dB (typical at 1GHz)
  • DC Current Gain (hFE): 30 to 200 (at VCE = 6V, IC = 10mA)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-frequency amplification in RF applications.
  • Suitable for VHF/UHF band circuits, such as oscillators, mixers, and amplifiers.
  • Features low noise and high gain, making it ideal for communication devices.
  • Packaged in a small surface-mount (SOT-23) form factor for compact designs.

Features:

  • High transition frequency (fT) for excellent RF performance.
  • Low noise figure for improved signal clarity.
  • Compact SOT-23 package for space-constrained applications.
  • Wide hFE range for flexible circuit design.

This transistor is commonly used in wireless communication, RF modules, and high-frequency signal processing circuits.

# 2SC5734K NPN Transistor: Technical Analysis and Implementation Guide

## Practical Application Scenarios

The 2SC5734K, manufactured by ROHM, is a high-voltage NPN bipolar junction transistor (BJT) designed for applications requiring robust switching and amplification. Its key characteristics—including a collector-emitter voltage (VCE) of 500V and a collector current (IC) of 0.1A—make it suitable for several specialized use cases:

1. Switching Power Supplies

The transistor’s high VCE rating allows it to handle voltage spikes in flyback converters and offline power supplies. Its fast switching speed ensures efficient energy transfer in high-frequency designs.

2. CRT Display Deflection Circuits

The 2SC5734K is commonly used in horizontal deflection circuits for cathode-ray tube (CRT) monitors and televisions, where high-voltage switching is critical for driving deflection coils.

3. Industrial Control Systems

Its ability to operate under high-voltage, low-current conditions makes it ideal for driving relays, solenoids, and other inductive loads in automation systems.

4. Audio Amplifiers

While not a primary choice for high-power audio applications, the 2SC5734K can serve in preamplifier stages or as a driver transistor in medium-voltage amplifier designs.

## Common Design-Phase Pitfalls and Avoidance Strategies

1. Thermal Management Issues

Despite its moderate power dissipation (1W), improper heatsinking can lead to thermal runaway, especially in high-duty-cycle applications.

*Mitigation:* Use a PCB with adequate copper area or a small heatsink to maintain junction temperature within safe limits.

2. Inadequate Voltage Derating

Operating the transistor near its 500V VCE limit without derating can cause premature failure due to voltage spikes.

*Mitigation:* Design circuits to operate at ≤80% of the rated VCE and incorporate snubber networks to suppress transients.

3. Incorrect Biasing in Linear Applications

When used as an amplifier, improper biasing can lead to distortion or excessive power dissipation.

*Mitigation:* Ensure stable base-emitter biasing using feedback resistors or a constant-current source.

4. Failure to Account for Low Current Gain (hFE)

The 2SC5734K has a relatively low hFE (40–320), which may require additional driver stages in high-gain applications.

*Mitigation:* Pair with a pre-driver transistor or use a Darlington configuration if higher gain is needed.

## Key Technical Considerations for Implementation

1. Voltage and Current Ratings

Verify that the application’s maximum VCE and IC do not exceed the datasheet specifications, including transient conditions.

2. Switching Speed Optimization

For fast-switching applications, minimize parasitic inductance in the layout and ensure proper base drive current to reduce turn-on/off delays.

3. ESD Sensitivity

Like most BJ

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