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RSS090N03-TB Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
RSS090N03-TBROHM16259Yes

RSS090N03-TB** is a power MOSFET manufactured by **ROHM Semiconductor**.

The RSS090N03-TB is a power MOSFET manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 90A
  • Pulsed Drain Current (IDM): 360A
  • Power Dissipation (PD): 100W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 3.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) / 2.5V (max)
  • Input Capacitance (Ciss): 4000pF (typ)
  • Package: TO-263 (D2PAK)

Descriptions:

  • Designed for high-power switching applications.
  • Low on-resistance for improved efficiency.
  • Suitable for motor control, power supplies, and DC-DC converters.

Features:

  • Low RDS(on): Reduces conduction losses.
  • Fast Switching: Optimized for high-speed operation.
  • High Current Capability: Supports up to 90A continuous current.
  • Avalanche Energy Rated: Enhanced ruggedness.
  • Lead-Free & RoHS Compliant.

For detailed datasheets, refer to ROHM's official documentation.

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