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SP8M3TB Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SP8M3TBROHM1900Yes

SP8M3TB** is a **MOSFET** manufactured by **ROHM Semiconductor**.

The SP8M3TB is a MOSFET manufactured by ROHM Semiconductor.

Specifications:

  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 80A
  • Pulsed Drain Current (IDM): 320A
  • Power Dissipation (PD): 100W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 3.0mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) - 2.5V (max)
  • Package: TO-263 (D2PAK)

Features:

  • Low on-resistance for high efficiency
  • High current handling capability
  • Fast switching performance
  • Suitable for power management applications

Applications:

  • DC-DC converters
  • Motor control
  • Power supplies
  • Battery management systems

This MOSFET is designed for high-power, high-efficiency applications where low conduction losses are critical.

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