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UMD2N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UMD2NROHM1760Yes

UMD2N is a dual N-channel MOSFET manufactured by ROHM Semiconductor.

The UMD2N is a dual N-channel MOSFET manufactured by ROHM Semiconductor. Below are its specifications, descriptions, and features:

Specifications:

  • Type: Dual N-channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): 3.5A per channel
  • Power Dissipation (PD): 1.5W (per channel)
  • On-Resistance (RDS(ON)): 50mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) to 2.5V (max)
  • Package: SSOP6

Descriptions:

  • The UMD2N is a compact dual N-channel MOSFET designed for high-efficiency switching applications.
  • It is suitable for power management in portable devices, DC-DC converters, and load switching.
  • The SSOP6 package offers space-saving benefits for compact PCB designs.

Features:

  • Low On-Resistance: Minimizes conduction losses for improved efficiency.
  • Fast Switching Speed: Enhances performance in high-frequency applications.
  • Dual-Channel Design: Enables integration of two MOSFETs in a single package.
  • Compact SSOP6 Package: Saves board space in densely packed circuits.
  • Low Threshold Voltage: Ensures compatibility with low-voltage drive circuits.

For detailed electrical characteristics and application notes, refer to the official ROHM datasheet.

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