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UMD6NTN Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UMD6NTNROHM2880Yes

Manufacturer:** ROHM Semiconductor **Part Number:** UMD6NTN ### **Specifications:** - **Transistor Type:** N-channel MOSFET - **Drain-Source Voltage (VDS):** 60V - **Drain Current (ID):** 6A - **On-Resistance (RDS(on)):** 0.

Manufacturer: ROHM Semiconductor

Part Number: UMD6NTN

Specifications:

  • Transistor Type: N-channel MOSFET
  • Drain-Source Voltage (VDS): 60V
  • Drain Current (ID): 6A
  • On-Resistance (RDS(on)): 0.06Ω (max) @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2W
  • Package: TO-252 (DPAK)

Descriptions:

The UMD6NTN is a high-performance N-channel MOSFET designed for power switching applications. It features low on-resistance and fast switching characteristics, making it suitable for DC-DC converters, motor control, and other power management circuits.

Features:

  • Low on-resistance (RDS(on))
  • High-speed switching
  • Low gate charge
  • Avalanche energy specified
  • Lead-free and RoHS compliant

This MOSFET is optimized for efficiency and reliability in various power electronics applications.

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