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UMH9N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
UMH9NROHM2880Yes

UMH9N is a P-channel MOSFET manufactured by ROHM Semiconductor.

The UMH9N is a P-channel MOSFET manufactured by ROHM Semiconductor. Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Drain Current (ID): -5.5A
  • Power Dissipation (PD): 2W
  • On-Resistance (RDS(on)): 50mΩ (max) @ VGS = -10V
  • Threshold Voltage (VGS(th)): -1.0V to -2.5V
  • Package: SOP-8

Descriptions:

  • The UMH9N is a P-channel MOSFET designed for power switching applications.
  • It features low on-resistance and high-speed switching performance.
  • Suitable for use in power management, load switching, and DC-DC conversion circuits.

Features:

  • Low on-resistance (RDS(on)) for reduced power loss.
  • High-speed switching capability.
  • Compact SOP-8 package for space-saving designs.
  • Suitable for battery protection and power supply applications.

For detailed electrical characteristics and application notes, refer to the official ROHM datasheet.

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