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2SA1577-T106R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1577-T106RROHM1860Yes

2SA1577-T106R** is a PNP transistor manufactured by **ROHM Semiconductor**.

The 2SA1577-T106R is a PNP transistor manufactured by ROHM Semiconductor.

Specifications:

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Package: TO-92 (Standard through-hole package)
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -500mA
  • Power Dissipation (PD): 500mW
  • DC Current Gain (hFE): 120 to 400 (at VCE = -6V, IC = -150mA)
  • Transition Frequency (fT): 150MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • High current gain (hFE) for improved signal amplification.
  • Suitable for low-noise and high-speed switching circuits.
  • Compact TO-92 package for easy PCB mounting.
  • Commonly used in audio amplifiers, driver circuits, and power management applications.

For exact performance characteristics, refer to the ROHM datasheet for the 2SA1577-T106R.

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