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2SB1132-T100Q Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1132-T100QROHM1000Yes

2SB1132-T100Q** is a PNP bipolar junction transistor (BJT) manufactured by **ROHM Semiconductor**.

The 2SB1132-T100Q is a PNP bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -2A
  • Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 120 to 400 (at IC = -0.5A, VCE = -5V)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-252 (DPAK)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • Surface-mount package (TO-252) for compact PCB designs.

Features:

  • High current gain (hFE) for efficient signal amplification.
  • Low saturation voltage for improved switching performance.
  • Compact DPAK package for space-saving designs.
  • Reliable performance in various electronic circuits.

For detailed datasheets, refer to ROHM's official documentation.

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