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2SB1198KT146Q/R Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1198KT146Q/RROHM1075Yes

2SB1198KT146Q/R** is a PNP bipolar junction transistor (BJT) manufactured by **ROHM Semiconductor**.

The 2SB1198KT146Q/R is a PNP bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. Below are the factual specifications, descriptions, and features of this component:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 to 400
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-252 (DPAK)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low-voltage, high-current circuits.
  • Features high current gain (hFE) and low saturation voltage.

Features:

  • High current capability (up to 3A).
  • Low collector-emitter saturation voltage.
  • Compact and surface-mountable (TO-252 package).
  • Pb-free and RoHS compliant.

This transistor is commonly used in power management, motor control, and switching circuits. For detailed performance curves and application notes, refer to the official ROHM datasheet.

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