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2SB1357 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SB1357ROHM230Yes

Part Number:** 2SB1357 **Manufacturer:** ROHM ### **Specifications:** - **Transistor Type:** PNP Bipolar Junction Transistor (BJT) - **Collector-Base Voltage (VCBO):** -50V - **Collector-Emitter Voltage (VCEO):** -50V - **Emitter-Base Volta

Part Number: 2SB1357

Manufacturer: ROHM

Specifications:

  • Transistor Type: PNP Bipolar Junction Transistor (BJT)
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -3A
  • Power Dissipation (PD): 1W
  • DC Current Gain (hFE): 60 to 320 (depending on conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-126

Descriptions:

The 2SB1357 is a PNP bipolar transistor designed for general-purpose amplification and switching applications. It features a high current capability and moderate voltage ratings, making it suitable for various electronic circuits.

Features:

  • High collector current (up to -3A)
  • Low saturation voltage
  • Suitable for power amplification and switching
  • Compact TO-126 package for easy mounting

For detailed electrical characteristics and application notes, refer to the official ROHM datasheet.

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